DMN3030LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
30V
R DS(ON) max
18m ? @ V GS = 10V
30m ? @ V GS = 4.5V
I D max
T A = +25°C
9.0A
7.0A
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
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Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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Backlighting
Power Management Functions
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Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
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DC-DC Converters
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Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
S
S
D
D
D
Top View
S
G
Top View
D
D
G
S
Equivalent circuit
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN3030LSS-13
Case
SO-8
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
= Manufacturer’s Marking
N3030LS = Product Type Marking Code
N3030LS
YY WW
N3030LS
YY WW
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
DMN3030LSS
Document number: DS31261 Rev. 12 - 2
1 of 6
www.diodes.com
October 2013
? Diodes Incorporated
相关PDF资料
DMN3031LSS-13 MOSFET N-CH 30V 9A 8SOP
DMN3033LDM-7 MOSFET N-CH 30V 6.9A SOT-26
DMN3033LSD-13 MOSFET N-CH 30V 6.9A 8-SOIC
DMN3033LSN-7 MOSFET N-CH 30V 6A SC59-3
DMN3050S-7 MOSFET N-CH 30V 5.2A SOT-23
DMN3051L-7 MOSFET N-CH 30V 5.8A SOT23-3
DMN3052L-7 MOSFET N-CH 30V 5.4A SOT23-3
DMN3052LSS-13 MOSFET N-CH 30V 7.1A 8-SOIC
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